A silicon phototransistor with a MIS tunnel junction emitter
Abstract
A silicon phototransistor using low-temperature processing has been fabricated. The emitter of the bipolar transistor is an Al-SiO 2-p-Si tunnel junction. The quantum efficiency gain is 200 at 0.6328 micron. The common-emitter current gain of the analogous three-terminal metal-insulator-semiconductor (MIS) transistor also is 200. This demonstrates the high minority-carrier injection efficiency of the MIS emitter.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- August 1983
- DOI:
- 10.1109/EDL.1983.25737
- Bibcode:
- 1983IEDL....4..291S
- Keywords:
-
- Bipolar Transistors;
- Carrier Injection;
- Mis (Semiconductors);
- Phototransistors;
- Silicon Transistors;
- Volt-Ampere Characteristics;
- Low Temperature;
- Minority Carriers;
- Quantum Efficiency;
- Electronics and Electrical Engineering