Double heterojunction Al(x)Ga(1-x)As/GaAs bipolar transistors (DHBJT's) by MBE with a current gain of 1650
Abstract
Double heterojunction AlGaAs/GaAs bipolar junction transistors (DHBJT's) grown by molecular beam epitaxy (MBE) were fabricated and tested. Devices with 0.2-micron and 0.1-micron base thicknesses exhibited common emitter current gains of up to 325 and 1650, respectively, in a wide range of collector currents. To obtain such high current gains, growth conditions had to be optimized and controlled. These high current gains, compared with the previous best value of 120 obtained in a MBE-grown transistor,make the HBJT's very promising for low-power high-speed logic application.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- May 1983
- DOI:
- 10.1109/EDL.1983.25676
- Bibcode:
- 1983IEDL....4..130S
- Keywords:
-
- Aluminum Gallium Arsenides;
- Bipolar Transistors;
- Current Amplifiers;
- Gallium Arsenides;
- Heterojunction Devices;
- Molecular Beam Epitaxy;
- Amplifier Design;
- Fabrication;
- High Speed;
- Performance Tests;
- Time Response;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering