A new high-power voltage-controlled differential negative resistance device - The Lambda bipolar power transistor
Abstract
A new high power voltage-controlled differential negative resistance device using the Lambda bipolar transistor structure, called the Lambda bipolar power transistor, is proposed and studied. The basic structure of this new device consists of the simultaneous integration of an interdigitated bipolar junction transistor and a merged metal-oxide-semiconductor field effect transistor. Two basic interconnection configurations of the integrated devices are also discussed. Several interesting applications based on the fabricated devices are demonstrated. It is shown tat the proposed device can be used as power signal generator and amplitude modulator using very simple circuits.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- April 1983
- Bibcode:
- 1983IEDL....4...78W
- Keywords:
-
- Bipolar Transistors;
- Field Effect Transistors;
- Integrated Circuits;
- Negative Resistance Devices;
- Volt-Ampere Characteristics;
- Voltage Controlled Oscillators;
- Amplitude Modulation;
- Metal Oxide Semiconductors;
- Signal Generators;
- Transistor Circuits;
- Electronics and Electrical Engineering