Laser chemical etching of vias in GaAs
Abstract
Rapid drilling of vias in thick wafers (381 microns) of GaAs has been achieved by a laser-assisted etching process. The technique utilized a CW visible argon ion laser and an etchant gas of low pressure Cl2. Data on the dependence of the etch rate on the laser power, wavelength, and Cl2 gas pressure are presented.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- February 1983
- DOI:
- 10.1109/EDL.1983.25639
- Bibcode:
- 1983IEDL....4...39T
- Keywords:
-
- Etching;
- Fabrication;
- Gallium Arsenides;
- Laser Drilling;
- Wafers;
- Argon Lasers;
- Chlorine;
- Continuous Wave Lasers;
- Photochemical Reactions;
- Pressure Effects;
- Lasers and Masers