Deep centers in gallium arsenide associated with intrinsic structural defects

Consideration is given to techniques for the controlled introduction of point defects in GaAs; radiation defects; point defects introduced during growth; defects in deformed GaAs; and heat-treatment defects. It is found that, with a few exceptions, deep centers introduced in GaAs by electron irradiation, heat treatment, and during growth are different in character. This means that these defects probably have a different structure: electron irradiation introduces simple pure defects while heat treatment leads to the formation of complexes of intrinsic defects with alloying or residual impurities.