New technique for semiconductor device modelling
Abstract
The present investigation is concerned with a new technique for use in computer models of semiconductor devices. According to this technique, the charge carriers are represented by particles which move under the influence of the electric field. Energy and momentum in particle motion are being evaluated on the basis of an employment of the relaxation time approximation with energy-dependent parameters. The considered technique was used to simulate a GaAs transferred-electron device, which was also modelled using a fluid-flow technique. The results obtained on the basis of both models with respect to carrier-density profile and energy profile are illustrated with the aid of graphs.
- Publication:
-
Electronics Letters
- Pub Date:
- December 1983
- DOI:
- 10.1049/el:19830737
- Bibcode:
- 1983ElL....19.1087G
- Keywords:
-
- Carrier Transport (Solid State);
- Computerized Simulation;
- Gallium Arsenides;
- Semiconductor Devices;
- Transferred Electron Devices;
- Carrier Density (Solid State);
- Electric Fields;
- Particle Motion;
- Relaxation Time;
- Electronics and Electrical Engineering