Quarter-micron gate length microwave high electron mobility transistor
Abstract
Quarter-micron gate length high electron mobility transistors have been fabricated using an electron-beam direct-writing technique. A maximum stable gain of 10 dB at 18 GHz has been measured at room temperature. A room-temperature cutoff frequency as high as 45 GHz has also been obtained.
- Publication:
-
Electronics Letters
- Pub Date:
- October 1983
- DOI:
- Bibcode:
- 1983ElL....19..894C
- Keywords:
-
- Electron Mobility;
- Gates (Circuits);
- High Electron Mobility Transistors;
- Microwave Circuits;
- Semiconductor Devices;
- Transistors;
- Aluminum Gallium Arsenides;
- Capacitance;
- Frequency Response;
- Microelectronics;
- Power Gain;
- Electronics and Electrical Engineering