High-performance millimetre-wave mixer diodes fabricated using a deep mesa etch approach
Abstract
Schottky-barrier junction mixer diodes compatible with monolithic integration have been fabricated on semiinsulating GaAs substrates using buried VPE n(+) layers and deep mesa etch processing. A 590 GHz cutoff frequency was determined using modified DeLoach analysis and fin-line chip mounting. A 5:3 dB (SSB) noise figure and a 4.8 dB conversion loss were obtained at 35 GHz for a pair of chips in a balanced microstrip mixer.
- Publication:
-
Electronics Letters
- Pub Date:
- September 1983
- DOI:
- 10.1049/el:19830510
- Bibcode:
- 1983ElL....19..749H
- Keywords:
-
- Gallium Arsenides;
- Microwave Circuits;
- Millimeter Waves;
- Mixing Circuits;
- Schottky Diodes;
- Chips (Electronics);
- Etching;
- Fabrication;
- Frequency Response;
- Integrated Circuits;
- Microstrip Devices;
- Performance Tests;
- Semiconductor Diodes;
- Vapor Phase Epitaxy;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering