Anodic oxide gate a-Si:H MOSFET
Abstract
The first a-Si:H MOSFET having native oxide at the insulator/a-Si:H interface is reported. Anodic oxidation in the AGW electrolyte is applied to Al/a-Si:H structures to form Al2O3/native oxide/a-Si:H gate structures. Resulting FETs show typical effective mobilities of 0.02 sq cm/Vs after proper low-temperature annealing in H2. Anodic oxidation is thus proved to be applicable to a-Si:H device technology as a low-temperature oxidation process.
- Publication:
-
Electronics Letters
- Pub Date:
- August 1983
- DOI:
- 10.1049/el:19830413
- Bibcode:
- 1983ElL....19..607Y
- Keywords:
-
- Amorphous Semiconductors;
- Field Effect Transistors;
- Gates (Circuits);
- Metal Oxide Semiconductors;
- Oxide Films;
- Silicon Films;
- Anodes;
- Fabrication;
- Hydrogenation;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering