Implications of velocity overshoot in heterojunction transit-time diodes
Abstract
The influence of transient transport in heterojunction transit-time diodes is examined. It is argued that transient overshoot effects may be very important in such devices and that the presence of this overshoot will significantly affect the performance of the devices. It is determined that heterojunction devices in which velocity overshoot occurs will have structures somewhat different from designs based on drift-diffusion transport. Thus, the somewhat disappointing performance of existing heterojunction transit-time devices may be partly attributable to inappropriate design. It is concluded that RF admittance against frequency measurements on heterojunction diodes may provide a tool for the investigation and characterization of transient transport phenomena.
- Publication:
-
Electronics Letters
- Pub Date:
- July 1983
- DOI:
- 10.1049/el:19830347
- Bibcode:
- 1983ElL....19..510B
- Keywords:
-
- Carrier Transport (Solid State);
- Heterojunction Devices;
- Microwave Equipment;
- Semiconductor Diodes;
- Transit Time;
- Gallium Arsenides;
- Millimeter Waves;
- Electronics and Electrical Engineering