High-power InP MISFETs
Abstract
InP MISFETs with SiO2 as the gate insulator and a deep channel recess have been fabricated. At 9 GHz the highest power output with 4 dB gain was 3.5 W/mm gate width with 33 percent power added efficiency. This power is more than twice that of the best GaAs MESFET.
- Publication:
-
Electronics Letters
- Pub Date:
- June 1983
- DOI:
- 10.1049/el:19830296
- Bibcode:
- 1983ElL....19..433A
- Keywords:
-
- Field Effect Transistors;
- Indium Phosphides;
- Mis (Semiconductors);
- Power Conditioning;
- Power Efficiency;
- Power Gain;
- Capacitance;
- Fabrication;
- Microwave Amplifiers;
- Power Amplifiers;
- Silicon Dioxide;
- Electronics and Electrical Engineering