High-speed GaAlAs-GaAs heterojunction bipolar transistors with near-ballistic operation
Abstract
GaAlAs-GaAs heterojunction bipolar transistors (HBTs) with an abrupt emitter-base interface have been realised by molecular-beam epitaxy on semi-insulating substrates. A gain-bandwidth product of 15 GHz has been measured for I(c) equals 20 mA and V(CE) equals 8 V. These results are the best reported so far for HBTs and are very promising for high-speed logic.
- Publication:
-
Electronics Letters
- Pub Date:
- February 1983
- DOI:
- Bibcode:
- 1983ElL....19..147A
- Keywords:
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- Bipolar Transistors;
- Gallium Arsenides;
- Heterojunction Devices;
- Molecular Beam Epitaxy;
- Time Lag;
- Transistor Logic;
- Aluminum Gallium Arsenides;
- Ballistics;
- Bandwidth;
- Electron Microscopy;
- High Speed;
- Microwave Circuits;
- Power Gain;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering