Carrier lifetimes in silicon epitaxial layers deposited on oxygen-implanted substrates
Abstract
Carrier lifetimes in silicon epitaxial layers deposited on high-dose oxygen-implanted wafers have been obtained from measurements of diode storage times. A figure of 1.25 microsec was obtained for diodes in the implanted area, compared with 1.75 microsec for diodes outside the implanted area on the same wafer. This marginal degradation of lifetime indicates that the dielectrically isolated structure should be able to support bipolar and dynamic logic devices.
- Publication:
-
Electronics Letters
- Pub Date:
- February 1983
- DOI:
- 10.1049/el:19830098
- Bibcode:
- 1983ElL....19..139D
- Keywords:
-
- Carrier Transport (Solid State);
- Epitaxy;
- Implantation;
- Life (Durability);
- Silicon Dioxide;
- Silicon Junctions;
- Infrared Absorption;
- Logical Elements;
- Oxygen;
- Substrates;
- Time Measurement;
- Wafers;
- Electronics and Electrical Engineering