Ion implantation of boron in GaAs devices
Abstract
This paper describes some unique properties of ion-implanted boron in GaAs which have been applied to improve the performance of Schottky barrier diodes and ion implanted low-noise MESFETS. Self-aligned high resistivity guard rings for Schottky barrier diodes were formed by using low energy (40 keV) and low dose (10 to the 12th/sq cm) implanted B-11(+). Reverse breakdown voltages up to 100 V were achieved with the B-11(+) implanted guard ring, which was used to improve the performance of a 13- to 18-GHz switching device. GaAs substrate quality plays a major role in MESFET performance for devices fabricated by direct ion implantation of silicon atoms into liquid-encapsulated Czochralski material. High-energy (270 keV) B-11(+) implantation was used to improve the silicon impurity distribution near the substrate interface, reduce substrate effects, and produce a more abrupt interface. Since current conduction under low-noise MESFET operation occurs in this region of the channel, microwave performance is improved significantly.
- Publication:
-
COMSAT Technical Review
- Pub Date:
- 1983
- Bibcode:
- 1983COMTR..13..437M
- Keywords:
-
- Boron;
- Field Effect Transistors;
- Gallium Arsenides;
- Ion Implantation;
- Schottky Diodes;
- Volt-Ampere Characteristics;
- Electrical Faults;
- Microwave Equipment;
- Ring Structures;
- Switching Circuits;
- Electronics and Electrical Engineering