Silicon detector nonlinearity and related effects
Abstract
In the red and near infrared, silicon photodiodes occasionally exhibit an odd nonlinear responsivity that increases as a function of increasing incident radiant flux, and which is known as supralinearity. Experimental results are presented which are consistent with an explanation of this phenomenon in terms of recombination traps in the bulk silicon region. The possibility of modeling the response of a nonlinear detector to correct for this source of error is demonstrated. It is not however worthwhile to do so in most cases, since nonuniformity of response will remain a serious source of error. It is preferable to select a detector with sufficient uniformity and freedom from supralinearity effects for the accuracy required for a given application.
- Publication:
-
Applied Optics
- Pub Date:
- April 1983
- Bibcode:
- 1983ApOpt..33.1232S
- Keywords:
-
- Near Infrared Radiation;
- Nonlinearity;
- Photodiodes;
- Silicon Radiation Detectors;
- Spectral Sensitivity;
- Correlation;
- Linearity;
- Quantum Efficiency;
- Electronics and Electrical Engineering