High-frequency impedance of proton-bombarded injection lasers
Abstract
Experimental and theoretical results are given of an investigation of the capacitance behavior with frequency of GaAs injection lasers. It is shown that, for shallow-bombarded stripe geometry lasers, the zero-bias capacitance decreases rapidly beyond a certain frequency. This is interpreted in terms of confinement of the low-level radio frequency current under the stripe at high frequencies. Comparison of the experimental results with the analytically derived expressions provides a measure of the material resistivity adjoining the active region. This inferred material resistivity is shown to be in good agreement with results obtained by more direct measurements. Finally, the general conclusions are also applicable to other optoelectronic devices operating at high frequency, such as light-emitting diodes.
- Publication:
-
AT T Technical Journal
- Pub Date:
- February 1983
- Bibcode:
- 1983ATTTJ..62..463H
- Keywords:
-
- Electrical Impedance;
- Gallium Arsenide Lasers;
- Injection Lasers;
- Proton Irradiation;
- Frequency Response;
- High Frequencies;
- Metallizing;
- Optoelectronic Devices;
- Semiconductor Diodes;
- Lasers and Masers