Equilibrium noise in ion selective field effect transistors
Abstract
It has been shown that noise which is in excess of the semiconductor device noise can be identified with the electrochemical processes taking place in ISFETs. The frequency analysis of this noise yields information about interfacial capacitance and exchange current density at the membrane/solution interface. These parameters have been evaluated for several ion-selective membranes.
- Publication:
-
Interim Report Utah Univ
- Pub Date:
- July 1982
- Bibcode:
- 1982utah.reptR....H
- Keywords:
-
- Field Effect Transistors;
- Ion Selective Electrodes;
- Noise Spectra;
- Semiconductor Devices;
- Capacitance;
- Current Density;
- Electrochemistry;
- Electrometers;
- Electronics and Electrical Engineering