Growth of silicon-on-insulator films using a line-source electron beam
Abstract
A swept line source electron beam was used to study unseeded Si on insulator crystallization at beam scan speeds of 150 to 1500 cm/s. For a particular sample configuration a maximum linear crystallization velocity of approximately 350 cm/s was observed. At higher sweep speeds, competing nucleation occurred at intervals across the film. Both the limit in crystallization velocity and the intervals between nucleation are tentatively explained by a simple model.
- Publication:
-
Presented at the 6th Intern. Symp. on the Sci. Basis for Radioactive Waste Management
- Pub Date:
- 1982
- Bibcode:
- 1982sbrw.symp.....K
- Keywords:
-
- Crystal Growth;
- Electron Beams;
- Insulators;
- Nucleation;
- Recrystallization;
- Silicon;
- Velocity;
- Dielectrics;
- Electron Microscopy;
- Grain Boundaries;
- Heat Treatment;
- Numerical Analysis;
- Thermal Conductivity;
- Electronics and Electrical Engineering