Improving the reliability of VLSI circuits by constraints and by electric tests
Abstract
Oxide short circuits, electromigration, contamination, and hot electron injection are among the types of defects found in semiconductors. These defects are dependent on the temperature, the voltage (electric field), the surface, and the geometry of the circuit. An attempt is made to show the advantage of voltage in making reliable a population of semiconductors in MOS technology by eliminating oxide defects. The electrical and thermal acceleration factors of oxides were verified and some voltage timer combinations were tested during a test of memories. Results are presented.
- Publication:
-
Reliability and Maintainability
- Pub Date:
- September 1982
- Bibcode:
- 1982rema.rept..511P
- Keywords:
-
- Circuit Reliability;
- Constraints;
- Electric Potential;
- Electronic Equipment Tests;
- Metal Oxide Semiconductors;
- Very Large Scale Integration;
- Activation Energy;
- Electric Fields;
- Electromigration;
- Oxides;
- Statistical Analysis;
- Stress Analysis;
- Temperature Dependence;
- Electronics and Electrical Engineering