FET noise studies
Abstract
The GaAs field effect transistor (FET) oscillator is an alternative device for voltage controlled oscillator (VCO) applications because of its inherent wide band electronic tunability, the variety of operating modes possible such as common source, common gate, etc., and the ease of circuit design. However, it has one major drawback, namely, its high near carrier l/f noise which makes it unsuitable for many applications, such as radar systems. Progress made in understanding the relationship between fabrication technology and near carrier oscillator noise of FETs is described.
- Publication:
-
Final Technical Report
- Pub Date:
- October 1982
- Bibcode:
- 1982rayc.rept.....P
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Noise (Sound);
- Oscillators;
- Electromagnetic Noise;
- Gallium Compounds;
- Semiconductor Devices;
- Transistors;
- Electronics and Electrical Engineering