Improvement of polysilicon solar cells by aluminum diffusion
Abstract
Experimental results are presented that imply potential improvements afforded by aluminum diffusion in both bulk and thin-film polysilicon solar cells. With regard to bulk cells, gettering of intragrain defects by high-temperature aluminum diffusion, i.e., Al-Si alloying, is suggested. With regard to thin-film cells, substantial grain-boundary passivation by low-temperature aluminum diffusion (from the front surface) is indicated, and evaluated using EBIC measurements interpreted via numerical analysis of the underlying carrier transport problem. The actual benefit of the grain-boundary passivation to the open-circuit voltage of a thin-film cell is discussed.
- Publication:
-
16th Photovoltaic Specialists Conference
- Pub Date:
- 1982
- Bibcode:
- 1982pvsp.conf..421S
- Keywords:
-
- Crystal Defects;
- Doped Crystals;
- Energy Conversion Efficiency;
- Polycrystals;
- Silicon Junctions;
- Solar Cells;
- Surface Diffusion;
- Alloying;
- Aluminum;
- Carrier Transport (Solid State);
- Grain Boundaries;
- Passivity;
- Silicon Alloys;
- Silicon Films;
- Solid-State Physics