Electron device contact studies
Abstract
This report describes the initial half of a program of investigation and characterization of contacts made to GaAs. A theoretical model of contact behavior based on electron tunneling is adapted to GaAs and will be used to compare experimental results of Au contacts fabricated on Sn diffused, n-type, GaAs surface layers. The fabrication of n-type layers using spin-on dopant sources and a semi closed chamber, in an open tube diffusion process are explained. The characterization of contact performance with a value of specific contact resistance, Rc, and the measurement of Rc using the transfer length method are covered. Investigation into In-au GaAs alloyed type contacts is also presented.
- Publication:
-
Final Report
- Pub Date:
- May 1982
- Bibcode:
- 1982osu..reptQ....W
- Keywords:
-
- Electric Contacts;
- Electron Tunneling;
- Gallium Arsenides;
- Metals;
- Semiconductor Devices;
- Diffusion;
- Electric Potential;
- Electrical Resistivity;
- Fabrication;
- Ohmmeters;
- Surfaces;
- Electronics and Electrical Engineering