Computer modeling of millimeter-wave impatt diodes. One of a series of reports on millimeter-wave circuit analysis and synthesis
Abstract
A model of millimeter-wave Si IMPATTs has been developed which includes transient transport effects neglected in the conventional drift-diffusion model. The new model is based on principles of energy and momentum conservation. The model uses the first three velocity moments of the phase-space transport equation. Terms accounting for the effects of collisions incorporate energy dependent relaxation times and ionization rates.
- Publication:
-
Michigan Univ. Final Report
- Pub Date:
- November 1982
- Bibcode:
- 1982muaa.rept.....F
- Keywords:
-
- Avalanche Diodes;
- Millimeter Waves;
- Transport Properties;
- Computerized Simulation;
- Finite Difference Theory;
- Electronics and Electrical Engineering