Doping and transport studies in In/sub x/Ga/sub 1-x/As/GaAs strained-layer superlattices
Abstract
High quality In/sub x/Ga/sub 1-x/As/GaAs strained layer superlattices (SLS's), with 0.11 = to or x = to or 0.20, were grown by molecular beam epitaxy. The test structures grown include the first doped material in this SLS system, with Si being used for n-type doping and Be for p-type. A number of structures with up to 80 superlattice periods and with layer thicknesses in the 40 to 140 A range were characterized by X-ray diffraction and optical techniques. Doped specimens were characterized by C-V profiling and, for diode structures, by I-V, four terminal resistivity, and Hall effect measurements. Hall mobilities (parallel to the layers) are comparable to those of high quality bulk alloy material, further evidence of the high crystalline quality possible in multilayer structures with thin, high mismatched ( 1%) layers.
- Publication:
-
Presented at Intern. Conf. on Metastable and Modulated Semiconductor Structures
- Pub Date:
- 1982
- Bibcode:
- 1982mmss.conf.....F
- Keywords:
-
- Crystal Lattices;
- Doped Crystals;
- Electron Mobility;
- Hall Effect;
- Molecular Beam Epitaxy;
- Superconductors;
- Automatic Control;
- Computer Techniques;
- Electrical Resistivity;
- Gallium Arsenides;
- Numerical Analysis;
- X Ray Diffraction;
- Solid-State Physics