High temperature LSI
Abstract
Integrated injection logic (1,2) technology for reliable operation under a -55 C to +300 C, temperature range is discussed. Experimental measurements indicate that an 80 mv signal swing is available at 300 C with 100 micro A injection current per gate. In addition, modeling results predict how large gate fan-ins can decrease the maximum thermal operational limits. These operational limits and the longterm reliability factors associated with device metallization are evaluated via specialized test mask.
- Publication:
-
In NASA. Lewis Research Center Proc. of the Conf. on High-Temp. Electron. p 97-100 (SEE N82-15311 06-33
- Pub Date:
- 1982
- Bibcode:
- 1982hte..conf...97D
- Keywords:
-
- Bipolar Transistors;
- Carrier Injection;
- High Temperature Environments;
- Large Scale Integration;
- Logic Circuits;
- Logic Design;
- Metallizing;
- Silicon;
- Circuit Reliability;
- Fabrication;
- Gates (Circuits);
- Gold;
- Oscillators;
- Electronics and Electrical Engineering