Oxidation Induced Anisotropic Deformation in Perfect Si Crystals. Dynamical X-Ray Diffraction Study
Abstract
Double X-ray diffractometry has been used to investigate perfect Si crystals of different orientations, on which SiCO2 layers of different thickness were grown. For the (111) and (110) orientations no appreciable modification of the theoretical diffraction pattern is observed. An important modification, which depends on the SiO2 thickness, appears however for the (100) orientation. The observed effect does not change when the SiO2 is removed and can be interpreted as an enhancement of the lattice parameter.
- Publication:
-
Zeitschrift Naturforschung Teil A
- Pub Date:
- May 1982
- DOI:
- 10.1515/zna-1982-0506
- Bibcode:
- 1982ZNatA..37..433B