Polarization phenomena in the transition layer of SOS films
Abstract
Thermally stimulated depolarization (TSD) was used to study the silicon-sapphire interface in SOS films, and the activation energies of processes determining the observed TSD spectra were evaluated. The TSD spectra are attributed to polarization processes in the transition layer of the film. It is also found that, after high bias voltages (exceeding 1000 V) are applied to the SOS structure at elevated temperatures, a 'residual' thermally stimulated current peak with an activation energy of 0.55 eV is observed which can be multiply recorded without applying bias voltage in the heating-cooling cycles. It is suggested that this peak is due to the relaxation of slow states in the transition layer by means of the thermal emission of a portion of the accumulated charge.
- Publication:
-
Ukrainskii Fizicheskii Zhurnal
- Pub Date:
- October 1982
- Bibcode:
- 1982UkFiZ..27.1569L
- Keywords:
-
- Current Distribution;
- Depolarization;
- Electric Potential;
- Sos (Semiconductors);
- Temperature Effects;
- Transition Layers;
- Activation Energy;
- Energy Spectra;
- Silicon Films;
- Thermal Emission;
- Solid-State Physics