Microelectronic temperature sensor; silicon temperature sensor
Abstract
The development of silicon temperature sensor with a sensitivity and a reliability as high and a tolerance as small as possible for use in measurement and control is discussed. Spreading resistance with the use of silicon doped by neutron transmutation, and trimming of the single wafer tolerances of resistance is obtained; overstress yielded a long term stability better than 0.2%. The advantageous use of this sensor is shown.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- September 1982
- Bibcode:
- 1982STIN...8317857B
- Keywords:
-
- Microelectronics;
- Silicon;
- Temperature Sensors;
- Transmutation;
- Design Analysis;
- Mechanical Properties;
- Neutron Irradiation;
- Performance Tests;
- Radiogenic Materials;
- Instrumentation and Photography