VPE growth of InP for electronic devices
Abstract
A double dilution reactor for InP growth is described and problems concerning the fabrication of Schottky diodes and MIS contacts on InP are addressed. Device grade material has been obtained from this system.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- May 1982
- Bibcode:
- 1982STIN...8316638B
- Keywords:
-
- Indium Phosphides;
- Mis (Semiconductors);
- Schottky Diodes;
- Vapor Phase Epitaxy;
- Chemical Reactors;
- Doped Crystals;
- Electrical Properties;
- Heat Treatment;
- Mechanical Properties;
- Electronics and Electrical Engineering