Low frequency noise physical analysis for the improvement of the spectral purity of GaAs FETs oscillators
Abstract
Low frequency (L.F.) noise in GaAs FETs was investigated both theoretically and experimentally. The main contribution to the overall noise at frequencies over 10 3 Hz was found to be flicker noise generated in the gradual region of the channel. A new simple relationship is proposed to derive the noise voltage intensity referred back to the input at normal operating conditions: it is reported that this noise spectral intensity does not depend on bias voltages for micrometer or submicrometer devices. This relationship provides a fast and easy way for assessing devices for their L.F. noise: an improvement in the spectral purity of GaAs FETs oscillators designed with low L.F. noise FETs is reported.
- Publication:
-
Solid State Electronics
- Pub Date:
- May 1982
- DOI:
- 10.1016/0038-1101(82)90121-6
- Bibcode:
- 1982SSEle..25..367G
- Keywords:
-
- Electromagnetic Noise Measurement;
- Field Effect Transistors;
- Gallium Arsenides;
- Low Frequencies;
- Microwave Oscillators;
- Noise Spectra;
- Bias;
- Carrier Density (Solid State);
- Design Analysis;
- Flicker;
- Harmonic Oscillators;
- Noise Intensity;
- Noise Reduction;
- Electronics and Electrical Engineering