Modulation of the dielectric permittivity of a semiconductor by a strong microwave field

The modulation coefficient of the dielectric constant of a semiconductor is computed with allowance for the contribution of free charge carriers assuming that a weak microwave signal field and a strong microwave excitation field are applied to the semiconductor in addition to a strong electric field of constant magnitude. Results are presented in a graphical form and can be used for the precise analysis of equivalent varactor circuits, particularly in the case when varactor reactance at signal and excitation frequencies is not much greater than loss resistance.