Microwave switching with GaAs FETs
Abstract
A detailed examination is made of the GaAs FET as a microwave frequency switching element. Its equivalent circuit as a switch is related to channel parameters and device geometry. The rf circuit design considerations characteristic of FET switching circuits are discussed, with examples cited from recent monolithic circuit designs. The examples illustrate the versatility of GaAs FETs as switches. It is contended that when circuit size, dc power consumption, switching speed, and producibility in large quantities are of prime importance, GaAs monolithic FET switch circuits will pave the way for future systems applications.
- Publication:
-
Microwave Journal
- Pub Date:
- November 1982
- Bibcode:
- 1982MiJo...25...61A
- Keywords:
-
- Equivalent Circuits;
- Field Effect Transistors;
- Gallium Arsenides;
- Integrated Circuits;
- Microwave Switching;
- Switching Circuits;
- Capacitance;
- Design Analysis;
- Energy Dissipation;
- Network Synthesis;
- Performance Prediction;
- Electronics and Electrical Engineering