Radio-frequency devices based on p-n-p-n transistor equivalents
Abstract
Theoretical and experimental studies of negative-resistance devices based on p-n-p-n transistor equivalents are discussed. The characteristics of p-n-p-n transistor equivalents are analyzed, and the principles underlying the design and operation of amplifiers based on two- and four-terminal networks of p-n-p-n structure are considered. Also considered are parametric stabilizers of dc voltage and multivibrators based on p-n-p-n transistor equivalents.
- Publication:
-
Moscow Izdatel Radio Sviaz
- Pub Date:
- 1982
- Bibcode:
- 1982MIzRS....Q....A
- Keywords:
-
- Equivalent Circuits;
- Negative Resistance Devices;
- P-N-P-N Junctions;
- Radio Electronics;
- Transistor Circuits;
- Network Analysis;
- Network Synthesis;
- Parametric Amplifiers;
- Systems Stability;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering