Ionized-defect-scattering mobility in n-PbTe
Abstract
Epitaxial layers of n-PbTe with mobilities up to 4×106 cm2/Vs at 4 K were grown by the hot-wall technique. The experimental data can be explained in terms of ionized-defect scattering, usina a potential consisting of a Coulomb part and a short-range part, together with the correct low-temperature value for the static dielectric constant (ɛ = 1300).
- Publication:
-
Physics of Narrow Gap Semiconductors
- Pub Date:
- 1982
- DOI:
- 10.1007/3-540-11191-3_68
- Bibcode:
- 1982LNP...152..391P