Effects of Ammonia Anneal on Electron Trappings in Silicon Dioxide
Abstract
After annealing of silicon dioxide in ammonia at elevated temperature, a large increase in electron traps was observed. The dominant electron trap has a capture cross section of approximately 2 x 10 to the -17th sq cm and the volume density of the trap is 2 x 10 to the 18th/cu cm. From photo I-V measurements, it was shown that the traps are distributed in the bulk of the oxide. This increase in electron traps can be used to explain the improvement in breakdown of oxides reported earlier after similar anneal in ammonia. This electron trap may be due to the presence of oxynitrides. However, infrared measurements show an increase of bonded OH in the film and the capture cross section of the trap is the same as that due to bonded OH.
- Publication:
-
Journal of the Electrochemical Society
- Pub Date:
- September 1982
- DOI:
- 10.1149/1.2124347
- Bibcode:
- 1982JElS..129.2042L
- Keywords:
-
- Ammonia;
- Annealing;
- Electron Capture;
- Semiconducting Films;
- Silicon Dioxide;
- Trapped Particles;
- Absorption Cross Sections;
- Electrical Resistance;
- Hydroxyl Radicals;
- Oxynitrides;
- Thin Films;
- Solid-State Physics