Growth and physical properties of CdCr 2Se 4 defect single crystals
Abstract
Results for Cd 1- xMe xCr 2Se 4 (Me=In,Ag; 0⩽ x⩽0.1) single crystals grown by chemical transport reaction technique are presented. The influence of dopant as well as deviation from stoichiometry on electrical and magnetic characteristics have been investigated. The results are discussed taking into account the variable valence of chromium ions.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- May 1982
- DOI:
- 10.1016/0022-0248(82)90074-4
- Bibcode:
- 1982JCrGr..57..563M