Optical and electrical characterization of multiply doped silicon: A study of the Si:(In,Al) system
Abstract
Photoluminescence, infrared absorption, high-resolution photoconductivity, and Hall effect transport measurements have been used to study the optical and electrical properties of silicon single crystals grown by the float-zone method, which were intentionally doped with indium and aluminum. Indium-bound exciton luminescence, as well as strong U2 luminescence from isoelectronic traps, were observed in the as-grown material. However, despite a high concentration of Al in these samples, no aluminum bound exciton luminescence was observed. Exciton tunneling from Al to In bound states is believed responsible for the quenching of the Al luminescence. No photoluminescence from Al-related isoelectronic centers was detected, suggesting that In-related centers form preferentially. No X-levels were detected by Hall, absorption, or photoconductivity measurements before nor after electron irradiation and thermal annealing.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- December 1982
- DOI:
- 10.1063/1.330481
- Bibcode:
- 1982JAP....53.8793B
- Keywords:
-
- Aluminum;
- Doped Crystals;
- Electrical Properties;
- Electron Irradiation;
- Indium;
- Optical Properties;
- Silicon;
- Annealing;
- Hall Effect;
- Impurities;
- Infrared Absorption;
- Photoconductivity;
- Photoluminescence;
- Solid-State Physics