Radiation effects on MOS power transistors
Abstract
The results of a study to characterize the radiation response of a representative group of stage-of-the-art power MOSFET transistors are presented. Supplementation of previous total dose response data was concentrated on, with one type of power MOS transistor being subjected to a total-dose maximum of 100 Krad and three types subjected to 300 Krad. The only significant effect of dose exposure on power MOS transistors is a shift of threshold voltage toward more negative values. This shift is proportional to dose at low dose levels and tends to saturate at high dose levels. The saturation characteristics decreased slightly with increasing dose, and the gate leakage current increased with dose but remained negligible. The transconductance remained constant. Three transistor types were also exposed to a prompt dose rate environment in order to characterize their transient photoresponse and investigate their vulnerability to bipolar-junction-induced second breakdown.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1982
- DOI:
- 10.1109/TNS.1982.4336405
- Bibcode:
- 1982ITNS...29.1565V
- Keywords:
-
- Field Effect Transistors;
- Metal Oxide Semiconductors;
- Radiation Effects;
- Transistor Amplifiers;
- Power Amplifiers;
- Radiation Dosage;
- Threshold Voltage;
- Electronics and Electrical Engineering