Reduction of long-term transient radiation response in ion implanted GaAs FETs
Abstract
The long-term transient radiation response in ion implanted GaAs FETs induced by flash X-ray or electron pulses has been reduced by the incorporation of a deep buried p-layer beneath the active n-layer. Reductions in the change in drain current of up to two orders of magnitude were measured in FETs with the buried p-layer compared to FETs with only an n-implanted channel following a 100 rad X-ray pulse. This improvement in radiation tolerance is attributed to shielding of the active n-layer by the conducting p-layer from the effects of radiation induced trapped substrate charge.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1982
- DOI:
- 10.1109/TNS.1982.4336399
- Bibcode:
- 1982ITNS...29.1533A
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Ion Implantation;
- Radiation Effects;
- Radiation Protection;
- Transient Response;
- Doped Crystals;
- Long Term Effects;
- N-Type Semiconductors;
- P-Type Semiconductors;
- Temperature Effects;
- Electronics and Electrical Engineering