Cosmic ray effects on microelectronics
Abstract
It is noted that a single intensely ionizing particle can alter the information stored in a modern semiconductor memory and possibly do permanent damage to the microelectronic circuit involved. Particles of this type are common in nature and abundant in space. A simple yet accurate empirical model of the near-earth particle environment is described, and it is shown how the model can be used to estimate the frequency of single-particle effects in space-borne microelectronics. It is found that if the sensitivity is increased from a level where relativistic Fe nuclei can produce upsets to one where relativistic protons do it, the rate of upsets in a cosmic ray environment increases by about 3,000, provided the sensitive volume of each bit remains the same. If the sensitivity is increased through a reduction in the sensitive volume of the bits, the upset rate in a cosmic ray environment increases only moderately.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- February 1982
- DOI:
- 10.1109/TNS.1982.4335821
- Bibcode:
- 1982ITNS...29..169A
- Keywords:
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- Cosmic Rays;
- Microelectronics;
- Radiation Effects;
- Spacecraft Electronic Equipment;
- Energy Spectra;
- Linear Energy Transfer (Let);
- Relativistic Particles;
- Electronics and Electrical Engineering