Determination of microwave transistor noise and gain parameters through noise-figure measurements only
Abstract
A novel method for measuring noise and gain parameters of linear two-ports solely from noise-figure measurements is applied to noise and gain characterization of microwave transistors versus frequency and collector current in S-band. In addition, a technique to estimate the loss of the input tuner of the measuring setup is presented, which yields a further improvement in accuracy. As experimental verification, the noise and gain parameters of a microwave transistor versus collector current in the 2-4-GHz frequency range are reported.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- August 1982
- DOI:
- Bibcode:
- 1982ITMTT..30.1255M
- Keywords:
-
- Electromagnetic Noise Measurement;
- Microwave Equipment;
- Power Gain;
- Transistor Circuits;
- Computer Techniques;
- Signal To Noise Ratios;
- Superhigh Frequencies;
- Electronics and Electrical Engineering