FET photodetectors - A combined study using optical and electron-beam stimulation
Abstract
The photosensitivity of GaAs FET's has been studied using both optical and electron-beam (e-beam) stimulation at various signal frequencies up to 1.3 GHz. The results indicate that, at high frequencies, the photoconductive mechanism which usually gives a small current gain is the dominant process, whereas at low frequencies photovoltaic mechanisms, which lead to 'phototransistor' action are responsible for the observed high photosensitivity and current gain in the device.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- November 1982
- DOI:
- 10.1109/T-ED.1982.21028
- Bibcode:
- 1982ITED...29.1792N
- Keywords:
-
- Electron Beams;
- Field Effect Transistors;
- Light Beams;
- Photometers;
- Photosensitivity;
- Volt-Ampere Characteristics;
- Frequency Response;
- Gallium Arsenides;
- Gates (Circuits);
- Photovoltaic Effect;
- Electronics and Electrical Engineering