TiW silicide gate self-alignment technology for ultra-high-speed GaAs MESFET LSI/VLSI's
Abstract
It has been found that TiW silicide film forms Schottky contacts on GaAs which are extremely stable even at temperatures of up to 850 C. Using this silicide for gate material, a novel self-alignment technique for GaAs MESFET's has been developed. A minimum propagation delay of 50 ps with 1.5-micron gate logic and successful fabrication of 1-kbit fixed address GaAs static memory cell arrays which are based on E/D type DCFL's indicate that TiW silicide gate self-alignment technology is a very promising candidate for achieving ultra-high-speed GaAs MESFET LSI/VLSI's.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- October 1982
- DOI:
- 10.1109/T-ED.1982.20912
- Bibcode:
- 1982ITED...29.1541Y
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Gates (Circuits);
- Schottky Diodes;
- Semiconducting Films;
- Very Large Scale Integration;
- Vhsic (Circuits);
- Fabrication;
- Integrated Circuits;
- Large Scale Integration;
- Self Alignment;
- Semiconducting Films;
- Silicides;
- Thermal Stability;
- Time Lag;
- Titanium Compounds;
- Tungsten Compounds;
- Electronics and Electrical Engineering