Estimation of GaAs static RAM performance
Abstract
A simple and accurate GaAs MESFET model for circuit simulation has been established. Calculated static and dynamic performance have been found to coincide well with experimental results. RAM performance with various FET's was estimated adopting this model for the simulation. Reduction in series resistance by n(+) doping outside a gate and/or shortening source-drain distance is predicted to be very effective in improving not only access time, but also threshold-voltage margin. A 1-kbit static RAM with 0.8 ns at 400-mW dissipation power will be attainable by using a 0.5-micron gate length FET, with an allowable threshold-voltage standard deviation of 80 mV.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- July 1982
- DOI:
- 10.1109/T-ED.1982.20844
- Bibcode:
- 1982ITED...29.1130I
- Keywords:
-
- Access Time;
- Field Effect Transistors;
- Gallium Arsenides;
- Performance Prediction;
- Random Access Memory;
- Volt-Ampere Characteristics;
- Dynamic Tests;
- Energy Dissipation;
- Equivalent Circuits;
- Schottky Diodes;
- Standard Deviation;
- Static Tests;
- Systems Simulation;
- Threshold Voltage;
- Thresholds;
- Electronics and Electrical Engineering