A DC-12 GHz monolithic GaAsFET distributed amplifier
Abstract
A monolithic balanced traveling-wave amplifier stage using GaAs MESFET's is demonstrated. This amplifier achieves 7-9-dB gain with about 40 ps risetime and a -3-dB bandwidth of 12 GHz, on a 0.91 x 0.97-mm die. Its gain versus frequency is very flat, and /S11/, /S12/, and /S22/ are less than 0.2 from 0-18 GHz. S-parameter uniformity and yield data are measured on-wafer with a special hybrid wafer probe.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- July 1982
- DOI:
- 10.1109/T-ED.1982.20835
- Bibcode:
- 1982ITED...29.1065S
- Keywords:
-
- Broadband Amplifiers;
- Field Effect Transistors;
- Gallium Arsenides;
- Integrated Circuits;
- Microwave Amplifiers;
- Traveling Wave Amplifiers;
- Amplifier Design;
- Direct Current;
- Frequency Response;
- Power Gain;
- Signal Measurement;
- Superhigh Frequencies;
- Transistor Amplifiers;
- Wafers;
- Electronics and Electrical Engineering