Backgating in GaAs MESFET's
Abstract
The phenomenon of backgating in GaAs depletion mode MESFET devices is investigated. The origin of this effect is electron trapping on the Cr(2+) and EL(2) levels at the semi-insulating substrate-channel region interface. A model describing backgating, based on DLTS and spectral measurements, is presented. Calculations based on this model predict that closely compensated substrate material will minimize backgating. Preliminary experimental data support this prediction.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- July 1982
- DOI:
- Bibcode:
- 1982ITED...29.1059K
- Keywords:
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- Carrier Transport (Solid State);
- Field Effect Transistors;
- Gallium Arsenides;
- Integrated Circuits;
- Schottky Diodes;
- Substrates;
- Electron Capture;
- Energy Bands;
- Mathematical Models;
- Solid-Solid Interfaces;
- Space Charge;
- Trapped Particles;
- Electronics and Electrical Engineering