A 16K-bit static IIL RAM with 25-ns access time
Abstract
A 16,384 x 1-bit RAM with 25-ns access time, 600-mW power dissipation, and 33 sq mm chip size has been developed. Excellent speed-power performance with high packing density has been achieved by an oxide isolation technology in conjunction with novel ECL circuit techniques and IIL flip-flop memory cells, 980 sq microns (35 x 28 microns) in cell size. Development results have shown that IIL flip-flop memory cell is a trump card for assuring achievement of a high-performance large-capacity bipolar RAM, in the above 16K-bit/chip area.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- April 1982
- DOI:
- 10.1109/T-ED.1982.20764
- Bibcode:
- 1982ITED...29..695I
- Keywords:
-
- Access Time;
- Chips (Memory Devices);
- Energy Dissipation;
- Flip-Flops;
- Packing Density;
- Random Access Memory;
- Bipolar Transistors;
- Computer Storage Devices;
- Performance Prediction;
- Transistor Logic;
- Electronics and Electrical Engineering