Threedimensional simulation of VLSI MOSFET's  The threedimensional simulation program WATMOS
Abstract
A computer simulation program based on a threedimensional model for smallgeometry MOSFET's is described. The effect of SiSiO2 interface charge, ion implantation in the channel, p(+) isolation field ion implant (channel isolations), and the shape of the field oxide are all addressed in the model. The threedimensional simulations offer new insight into VLSI MOSFET devices. The effective channel width under certain bias conditions is found to decrease to 63% of its nominal value. The punchthrough current per unit width as a function of channel width is found for the first time to decrease rapidly as the channel width is reduced below 5 microns. A decrease of punchthrough current by three orders of magnitude is observed as the channel width is reduced from 2 to 1 micron. It is also found that the breakdown voltage of smallgeometry devices increases as the channel width decreases.
 Publication:

IEEE Transactions on Electron Devices
 Pub Date:
 April 1982
 DOI:
 10.1109/TED.1982.20755
 Bibcode:
 1982ITED...29..631H
 Keywords:

 Computer Aided Design;
 Computerized Simulation;
 Field Effect Transistors;
 Metal Oxide Semiconductors;
 Three Dimensional Models;
 Very Large Scale Integration;
 Channel Capacity;
 Electric Fields;
 Electric Potential;
 Electron Avalanche;
 Fortran;
 Ion Implantation;
 Silicon Junctions;
 Threshold Currents;
 Vhsic (Circuits);
 Electronics and Electrical Engineering