Heterostructure bipolar transistors and integrated circuits
Abstract
A bipolar transmitter with a wide-gap emitter is presented. Examples of heterostructure implementations of IIL and ECL are discussed, and future device possibilities based on technological premises are considered. The concept and high-speed benefits of the widegap emitter are reviewed, including recent conceptual developments such as an inverted transistor design in which the collector is made smaller than the emitter and placed on the surface of the structure, using a heterostructure design applicable to all transistors. Finally, the idea of a single-heterostructure transistor with a wide-gap emitter is generalized to DH transistors with both wide-gap emitters and collectors, and the question of FETs-versus-bipolars is considered.
- Publication:
-
IEEE Proceedings
- Pub Date:
- January 1982
- Bibcode:
- 1982IEEEP..70...13K
- Keywords:
-
- Band Structure Of Solids;
- Bipolar Transistors;
- Heterojunction Devices;
- Integrated Circuits;
- Technology Assessment;
- Transistor Logic;
- Design Analysis;
- Emitters;
- Energy Bands;
- Energy Gaps (Solid State);
- Field Effect Transistors;
- Performance Prediction;
- Technological Forecasting;
- Vhsic (Circuits);
- Electronics and Electrical Engineering