Hot-electron induced excess carriers in MOSFET's
Abstract
The existence of minority carriers in the substrate of n-channel MOSFET's operating in the saturation region is shown to be induced by turn-on of the source-substrate junction and photon generation. The two mechanisms are demonstrated experimentally and the photon-generation mechanism is further illustrated on a p-well CMOS wafer. Photon generation poses a constraint in VLSI dynamic RAM design.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- December 1982
- DOI:
- Bibcode:
- 1982IEDL....3..376T
- Keywords:
-
- Cmos;
- Electron Impact;
- Field Effect Transistors;
- Hot Electrons;
- Metal Oxide Semiconductors;
- Minority Carriers;
- Carrier Density (Solid State);
- Chips (Memory Devices);
- Photons;
- Saturation;
- Substrates;
- Very Large Scale Integration;
- Wafers;
- Electronics and Electrical Engineering